FQPF15P12

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

120V

Drain to Source Breakdown Voltage :

-120V

Power Dissipation :

41W

Package / Case :

TO-220-3 Full Pack

Series :

QFET®

Pbfree Code :

yes

Element Configuration :

Single

Weight :

2.27g

Power Dissipation-Max :

41W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

80 ns

Width :

4.9mm

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

80 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Current Rating :

-15A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Length :

10.36mm

Continuous Drain Current (ID) :

15A

Turn On Delay Time :

15 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Number of Terminations :

3

Vgs (Max) :

±30V

Voltage - Rated DC :

-120V

Number of Pins :

3

Height :

16.07mm

Operating Temperature :

-55°C~175°C TJ

Rise Time :

100ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 7.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Number of Elements :

1

Lead Free :

Lead Free

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.2Ohm

Mounting Type :

Through Hole

Factory Lead Time :

4 Weeks

Published :

2004

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3