FQPF14N15
- Mfr.Part #
- FQPF14N15
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 9.8A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 4.9A, 10V
- Drain to Source Voltage (Vdss) :
- 150V
- Packaging :
- Tube
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 9.8A
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Pulsed Drain Current-Max (IDM) :
- 39.2A
- Current - Continuous Drain (Id) @ 25°C :
- 9.8A Tc
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.21Ohm
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 715pF @ 25V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Vgs (Max) :
- ±25V
- DS Breakdown Voltage-Min :
- 150V
- Power Dissipation-Max :
- 48W Tc
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Surface Mount :
- No
- Series :
- QFET®
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Datasheets
- FQPF14N15

N-Channel Tube 210m Ω @ 4.9A, 10V ±25V 715pF @ 25V 23nC @ 10V 150V TO-220-3 Full Pack
FQPF14N15 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 715pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 9.8A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 39.2A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQPF14N15 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 39.2A.
a 150V drain to source voltage (Vdss)
FQPF14N15 Applications
There are a lot of Rochester Electronics, LLC
FQPF14N15 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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