FQPF13N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Turn-Off Delay Time :

130 ns

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2014

Power Dissipation-Max :

48W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

48W

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Element Configuration :

Single

Resistance :

540mOhm

Current Rating :

13A

Turn On Delay Time :

25 ns

Rise Time :

100ns

Number of Elements :

1

Mounting Type :

Through Hole

Series :

FRFET®

Vgs (Max) :

±30V

Threshold Voltage :

4V

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Voltage - Rated DC :

500V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

52A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Weight :

2.27g

Additional Feature :

FAST SWITCHING

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

13A

Lead Free :

Lead Free

Pbfree Code :

yes

Fall Time (Typ) :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Rds On (Max) @ Id, Vgs :

540m Ω @ 6.5A, 10V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V