FQPF13N10

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

95 mJ

Rds On (Max) @ Id, Vgs :

180m Ω @ 4.35A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.18ohm

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Transistor Application :

SWITCHING

Number of Terminations :

3

Vgs (Max) :

±25V

Surface Mount :

No

Mounting Type :

Through Hole

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Pulsed Drain Current-Max (IDM) :

34.8A

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

Not Applicable

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

30W Tc

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

8.7A

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)