FQPF13N06L
- Mfr.Part #
- FQPF13N06L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A TO220F
- Stock
- 11,285
- In Stock :
- 11,285
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 20 ns
- Packaging :
- Tube
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 5A, 10V
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Height :
- 9.19mm
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 2.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation-Max :
- 24W Tc
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Case Connection :
- Isolated
- Published :
- 2001
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 13.6A
- Voltage - Rated DC :
- 60V
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Resistance :
- 110mOhm
- Qualification Status :
- Not Qualified
- Turn On Delay Time :
- 8 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rise Time :
- 90ns
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Power Dissipation :
- 24W
- Weight :
- 2.27g
- JESD-609 Code :
- e3
- Length :
- 10.16mm
- Continuous Drain Current (ID) :
- 10A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 5V
- Transistor Element Material :
- SILICON
- Width :
- 4.7mm
- Package / Case :
- TO-220-3 Full Pack
- Fall Time (Typ) :
- 40 ns
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 40A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Datasheets
- FQPF13N06L
FQPF13N06L Documents

N-Channel Tube 110m Ω @ 5A, 10V ±20V 350pF @ 25V 6.4nC @ 5V TO-220-3 Full Pack
FQPF13N06L Description
FQPF13N06L is a type of N-Channel QFET? MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. It is able to provide low on-state resistance, superior switching performance, and high avalanche energy strength. It is ideally suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQPF13N06L Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the TO-220F package
FQPF13N06L Applications
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
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