FQPF12P10

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Mfr.Part #
FQPF12P10
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET P-CH 100V 8.2A TO220F
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
100V
Current - Continuous Drain (Id) @ 25°C :
8.2A Tc
JEDEC-95 Code :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Voltage (Vdss) :
100V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
Package / Case :
TO-220-3 Full Pack
Drain-source On Resistance-Max :
0.29Ohm
Drain Current-Max (Abs) (ID) :
8.2A
Rds On (Max) @ Id, Vgs :
290m Ω @ 4.1A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
FET Type :
P-Channel
Pulsed Drain Current-Max (IDM) :
32.8A
Avalanche Energy Rating (Eas) :
370 mJ
Vgs (Max) :
±30V
Number of Terminations :
3
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Position :
Single
Packaging :
Tube
Power Dissipation-Max :
38W Tc
Case Connection :
Isolated
Pin Count :
3
Series :
QFET®
Surface Mount :
No
Operating Temperature :
-55°C~175°C TJ
Qualification Status :
COMMERCIAL
Number of Elements :
1
Datasheets
FQPF12P10
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF12P10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, FQPF12P10 pinout, FQPF12P10 datasheet PDF, FQPF12P10 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF12P10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF12P10


P-Channel Tube 290m Ω @ 4.1A, 10V ±30V 800pF @ 25V 27nC @ 10V 100V TO-220-3 Full Pack

FQPF12P10 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 370 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [8.2A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 32.8A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQPF12P10 Features


the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 32.8A.
a 100V drain to source voltage (Vdss)


FQPF12P10 Applications


There are a lot of Rochester Electronics, LLC
FQPF12P10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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