FQPF12P10
- Mfr.Part #
- FQPF12P10
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 8.2A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 8.2A Tc
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Package / Case :
- TO-220-3 Full Pack
- Drain-source On Resistance-Max :
- 0.29Ohm
- Drain Current-Max (Abs) (ID) :
- 8.2A
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 4.1A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 32.8A
- Avalanche Energy Rating (Eas) :
- 370 mJ
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- Packaging :
- Tube
- Power Dissipation-Max :
- 38W Tc
- Case Connection :
- Isolated
- Pin Count :
- 3
- Series :
- QFET®
- Surface Mount :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Datasheets
- FQPF12P10

P-Channel Tube 290m Ω @ 4.1A, 10V ±30V 800pF @ 25V 27nC @ 10V 100V TO-220-3 Full Pack
FQPF12P10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 370 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [8.2A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 32.8A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQPF12P10 Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 32.8A.
a 100V drain to source voltage (Vdss)
FQPF12P10 Applications
There are a lot of Rochester Electronics, LLC
FQPF12P10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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