FQPF12P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

290m Ω @ 4.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Pin Count :

3

Packaging :

Tube

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

32.8A

Drain Current-Max (Abs) (ID) :

8.2A

Current - Continuous Drain (Id) @ 25°C :

8.2A Tc

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.29Ohm

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

38W Tc

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

370 mJ

Series :

QFET®