FQPF12N60T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Position :

Single

Power Dissipation-Max :

55W Tc

Drain Current-Max (Abs) (ID) :

5.8A

Vgs (Max) :

±30V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

790 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1.9pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Drain-source On Resistance-Max :

0.7Ohm

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

23A

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

700m Ω @ 2.9A, 10V

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

Not Applicable