FQPF12N60C
- Mfr.Part #
- FQPF12N60C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A TO220F
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2290pF @ 25V
- Series :
- QFET®
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 870 mJ
- Continuous Drain Current (ID) :
- 12A
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2007
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 85ns
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 650m Ω @ 6A, 10V
- Weight :
- 2.27g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 48A
- Case Connection :
- Isolated
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Fall Time (Typ) :
- 90 ns
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.65Ohm
- Power Dissipation-Max :
- 51W Tc
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 51W
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Voltage - Rated DC :
- 600V
- Current Rating :
- 12A
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 155 ns
- RoHS Status :
- RoHS Compliant
- Datasheets
- FQPF12N60C

N-Channel Tube 650m Ω @ 6A, 10V ±30V 2290pF @ 25V 63nC @ 10V TO-220-3 Full Pack
FQPF12N60C Description
The Fairchild FQPF12N60C is an N-Channel enhancement mode power field effect transistor built with Fairchild's unique planar stripe DMOS technology. This cutting-edge technology has been specifically designed to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes.
FQPF12N60C Features
-
Improved dv/dt capability
-
RoHS compliant
-
12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
-
Low gate charge ( typical 48 nC)
-
Low Crss ( typical 21pF)
-
Fast switching
-
100% avalanche tested
FQPF12N60C Applications
-
High efficient switched-mode power supplies
-
Active power factor correction
-
Electronic lamp ballast based on half-bridge topology
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