FQPF12N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

54 nC @ 10 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

600 V

Product Status :

Obsolete

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Power Dissipation (Max) :

55W (Tc)

FET Feature :

-

Rds On (Max) @ Id, Vgs :

700mOhm @ 2.9A, 10V

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

5.8A (Tc)

Vgs (Max) :

±30V

Supplier Device Package :

TO-220F-3

Technology :

MOSFET (Metal Oxide)