FQP3P50
- Mfr.Part #
- FQP3P50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 18,804
- In Stock :
- 18,804
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Turn On Delay Time :
- 12 ns
- Rise Time :
- 56ns
- Vgs (Max) :
- ±30V
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- P-Channel
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 85W Tc
- Length :
- 10.1mm
- Lead Free :
- Lead Free
- Nominal Vgs :
- -5 V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Voltage - Rated DC :
- -500V
- Published :
- 2017
- Dual Supply Voltage :
- -500V
- Height :
- 9.4mm
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Turn-Off Delay Time :
- 35 ns
- Width :
- 4.7mm
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 4.9 Ω @ 1.35A, 10V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 85W
- Series :
- QFET®
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Transistor Element Material :
- SILICON
- Current Rating :
- -2.7A
- Continuous Drain Current (ID) :
- 2.7A
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.8g
- Drain to Source Breakdown Voltage :
- -500V
- Resistance :
- 4.9Ohm
- Fall Time (Typ) :
- 45 ns
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Datasheets
- FQP3P50

P-Channel Tube 4.9 Ω @ 1.35A, 10V ±30V 660pF @ 25V 23nC @ 10V 500V TO-220-3
FQP3P50 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 660pF @ 25V.This device has a continuous drain current (ID) of [2.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-500V, the drain-source breakdown voltage is -500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQP3P50 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
a 500V drain to source voltage (Vdss)
FQP3P50 Applications
There are a lot of ON Semiconductor
FQP3P50 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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