FQP3N25

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Mfr.Part #
FQP3N25
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 2.8A TO220-3
Stock
12,066
In Stock :
12,066

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
250V
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Mounting Type :
Through Hole
Pin Count :
3
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
2.2 Ω @ 1.4A, 10V
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
QFET®
Power Dissipation-Max :
45W Tc
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
2.8A Tc
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 25V
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
2.8A
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Elements :
1
Reach Compliance Code :
Unknown
Packaging :
Tube
Avalanche Energy Rating (Eas) :
40 mJ
Pulsed Drain Current-Max (IDM) :
11.2A
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
250V
Datasheets
FQP3N25
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP3N25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, FQP3N25 pinout, FQP3N25 datasheet PDF, FQP3N25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP3N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP3N25


N-Channel Tube 2.2 Ω @ 1.4A, 10V ±30V 170pF @ 25V 5.2nC @ 10V 250V TO-220-3

FQP3N25 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 40 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.2.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 11.2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

FQP3N25 Features


the avalanche energy rating (Eas) is 40 mJ
based on its rated peak drain current 11.2A.
a 250V drain to source voltage (Vdss)


FQP3N25 Applications


There are a lot of Rochester Electronics, LLC
FQP3N25 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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