FQP3N25
- Mfr.Part #
- FQP3N25
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.8A TO220-3
- Stock
- 12,066
- In Stock :
- 12,066
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 2.2 Ω @ 1.4A, 10V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Power Dissipation-Max :
- 45W Tc
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 2.8A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Pulsed Drain Current-Max (IDM) :
- 11.2A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- DS Breakdown Voltage-Min :
- 250V
- Datasheets
- FQP3N25

N-Channel Tube 2.2 Ω @ 1.4A, 10V ±30V 170pF @ 25V 5.2nC @ 10V 250V TO-220-3
FQP3N25 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 40 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.2.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 11.2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
FQP3N25 Features
the avalanche energy rating (Eas) is 40 mJ
based on its rated peak drain current 11.2A.
a 250V drain to source voltage (Vdss)
FQP3N25 Applications
There are a lot of Rochester Electronics, LLC
FQP3N25 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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