FQP33N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±25V

Height :

9.4mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Current Rating :

33A

Weight :

1.8g

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

33A

Turn-Off Delay Time :

80 ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Nominal Vgs :

4 V

FET Type :

N-Channel

Power Dissipation :

127W

Package / Case :

TO-220-3

Fall Time (Typ) :

110 ns

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Number of Terminations :

3

Number of Elements :

1

Number of Pins :

3

Resistance :

52mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

25V

Length :

10.67mm

Power Dissipation-Max :

127W Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Series :

QFET®

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

Contact Plating :

Tin

Mounting Type :

Through Hole

Published :

2013

Rise Time :

195ns

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Dual Supply Voltage :

100V

Element Configuration :

Single

Threshold Voltage :

4V