FQP3N25
- Mfr.Part #
- FQP3N25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.8A TO220-3
- Stock
- 12,066
- In Stock :
- 12,066
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 11.2A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 10V
- DS Breakdown Voltage-Min :
- 250V
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 2.2 Ω @ 1.4A, 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 250V
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Series :
- QFET®
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Power Dissipation-Max :
- 45W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Transistor Element Material :
- SILICON
- Datasheets
- FQP3N25

N-Channel Tube 2.2 Ω @ 1.4A, 10V ±30V 170pF @ 25V 5.2nC @ 10V 250V TO-220-3
FQP3N25 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 40 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.2.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 11.2A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
FQP3N25 Features
the avalanche energy rating (Eas) is 40 mJ
based on its rated peak drain current 11.2A.
a 250V drain to source voltage (Vdss)
FQP3N25 Applications
There are a lot of Rochester Electronics, LLC
FQP3N25 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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