FQP32N12V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Series :

QFET®

Drain Current-Max (Abs) (ID) :

32A

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Vgs (Max) :

±30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.05Ohm

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Number of Elements :

1

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

50m Ω @ 16A, 10V

Pulsed Drain Current-Max (IDM) :

128A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.86pF @ 25V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

120V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

120V

Avalanche Energy Rating (Eas) :

439 mJ

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL