FQP32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

82m Ω @ 14A, 10V

Number of Elements :

1

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

955 mJ

Series :

QFET®

Factory Lead Time :

4 Weeks

Power Dissipation :

156W

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Mounting Type :

Through Hole

Number of Pins :

3

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminations :

3

Rise Time :

270ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Current Rating :

28A

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Fall Time (Typ) :

210 ns

FET Type :

N-Channel

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.082Ohm

Width :

4.7mm

Power Dissipation-Max :

156W Tc

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Element Configuration :

Single

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

245 ns

Height :

9.4mm

Voltage - Rated DC :

200V

Continuous Drain Current (ID) :

28A

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Length :

10.1mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±30V