FQP30N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Power Dissipation :

79W

Weight :

1.8g

Number of Pins :

3

Resistance :

40mOhm

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

25V

Current Rating :

30A

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 25V

Fall Time (Typ) :

40 ns

Element Configuration :

Single

Height :

20.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Max Junction Temperature (Tj) :

175°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

79W Tc

REACH SVHC :

No SVHC

Number of Elements :

1

Pbfree Code :

yes

ECCN Code :

EAR99

Length :

10.1mm

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Channels :

1

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

30A

Rise Time :

85ns

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±25V

Published :

2013

Contact Plating :

Tin

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

280 mJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Lead Free :

Lead Free

FET Type :

N-Channel

Radiation Hardening :

No

Threshold Voltage :

4V

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

40m Ω @ 15A, 10V

Width :

4.7mm

Mount :

Through Hole