FQP30N06

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Mfr.Part #
FQP30N06
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 30A TO220-3
Stock
22,387
In Stock :
22,387

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
4V
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±25V
Lead Free :
Lead Free
Weight :
1.8g
Power Dissipation-Max :
79W Tc
Max Junction Temperature (Tj) :
175°C
Avalanche Energy Rating (Eas) :
280 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Contact Plating :
Tin
Rise Time :
85ns
Height :
20.4mm
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Turn On Delay Time :
10 ns
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
JESD-609 Code :
e3
Turn-Off Delay Time :
35 ns
Length :
10.1mm
Continuous Drain Current (ID) :
30A
Pbfree Code :
yes
Current Rating :
30A
Factory Lead Time :
9 Weeks
Power Dissipation :
79W
Drain to Source Breakdown Voltage :
60V
Series :
QFET®
Mount :
Through Hole
Transistor Application :
SWITCHING
Fall Time (Typ) :
40 ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Input Capacitance (Ciss) (Max) @ Vds :
945pF @ 25V
FET Type :
N-Channel
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Width :
4.7mm
Number of Terminations :
3
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
25V
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
40m Ω @ 15A, 10V
Published :
2013
Voltage - Rated DC :
60V
Vgs(th) (Max) @ Id :
4V @ 250µA
REACH SVHC :
No SVHC
Resistance :
40mOhm
Number of Pins :
3
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP30N06 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, FQP30N06 pinout, FQP30N06 datasheet PDF, FQP30N06 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP30N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP30N06


N-Channel Tube 40m Ω @ 15A, 10V ±25V 945pF @ 25V 25nC @ 10V TO-220-3

FQP30N06 Description

The FQP30N06 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The FQP30N06 device is suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
FQP30N06 Features

● 30 A, 60 V, RDS(on) = 40 mΩ (Max.) @ VGS = 10 V, lD = 15 A
● Low Gate Charge (Typ. 19 nC)
● Low Crss (Typ. 40 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating
FQP30N06 Applications

● Switched mode power supplies
● Audio amplifier
● DC motor control
● Variable switching power applications
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
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