FQP30N06
- Mfr.Part #
- FQP30N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A TO220-3
- Stock
- 22,387
- In Stock :
- 22,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 10 ns
- Power Dissipation :
- 79W
- Weight :
- 1.8g
- Number of Pins :
- 3
- Resistance :
- 40mOhm
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 9 Weeks
- Gate to Source Voltage (Vgs) :
- 25V
- Current Rating :
- 30A
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 945pF @ 25V
- Fall Time (Typ) :
- 40 ns
- Element Configuration :
- Single
- Height :
- 20.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 35 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Max Junction Temperature (Tj) :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 79W Tc
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Length :
- 10.1mm
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 30A
- Rise Time :
- 85ns
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±25V
- Published :
- 2013
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 280 mJ
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Threshold Voltage :
- 4V
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 60V
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 15A, 10V
- Width :
- 4.7mm
- Mount :
- Through Hole
- Datasheets
- FQP30N06
FQP30N06 Documents

N-Channel Tube 40m Ω @ 15A, 10V ±25V 945pF @ 25V 25nC @ 10V TO-220-3
The FQP30N06 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The FQP30N06 device is suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
FQP30N06 Features
● 30 A, 60 V, RDS(on) = 40 mΩ (Max.) @ VGS = 10 V, lD = 15 A
● Low Gate Charge (Typ. 19 nC)
● Low Crss (Typ. 40 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating
FQP30N06 Applications
● Switched mode power supplies
● Audio amplifier
● DC motor control
● Variable switching power applications
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
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