FQP32N20C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Rds On (Max) @ Id, Vgs :

82m Ω @ 14A, 10V

Power Dissipation-Max :

156W Tc

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.4mm

Weight :

1.8g

Published :

2004

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

25 ns

Fall Time (Typ) :

210 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain-source On Resistance-Max :

0.082Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

955 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Pbfree Code :

yes

Series :

QFET®

Current Rating :

28A

Power Dissipation :

156W

Lead Free :

Lead Free

Package / Case :

TO-220-3

Number of Elements :

1

Mounting Type :

Through Hole

Rise Time :

270ns

Length :

10.1mm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Voltage - Rated DC :

200V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Turn-Off Delay Time :

245 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

200V

Number of Pins :

3