FQP3N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Current Rating :

3.2A

Power Dissipation-Max :

55W Tc

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Height :

16.3mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

300V

Voltage - Rated DC :

300V

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Threshold Voltage :

1.65V

Mounting Type :

Through Hole

Turn-Off Delay Time :

10 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Number of Terminations :

3

Power Dissipation :

55W

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Packaging :

Tube

JESD-609 Code :

e3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

TO-220-3

Length :

10.67mm

Radiation Hardening :

No

Weight :

1.8g

Lead Free :

Lead Free

Rise Time :

40ns

Published :

2013

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Factory Lead Time :

9 Weeks

FET Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

25 ns

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

3.2A

Vgs (Max) :

±30V