FQP34N20L
- Mfr.Part #
- FQP34N20L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 31A TO220-3
- Stock
- 74,575
- In Stock :
- 74,575
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 75mOhm @ 15.5A, 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 180W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 5V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- TO-220-3
- Published :
- 2000
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- FQP34N20L

N-Channel Tube 75mOhm @ 15.5A, 10V ±20V 3900pF @ 25V 72nC @ 5V 200V TO-220-3
FQP34N20L Description
The FQP34N20L is an N-Channel enhancement mode power MOSFET produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQP34N20L Features
-
31A, 200V, RDS(on) = 75mΩ(Max.) @VGS = 10 V, ID = 15.5A
-
Low gate charge ( Typ. 60nC)
-
Low Crss ( Typ. 55pF)
-
100% avalanche tested
FQP34N20L Applications
-
Other Audio & Video
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