FQP30N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Drain to Source Breakdown Voltage :

60V

Rise Time :

210ns

Width :

4.7mm

Mount :

Through Hole

Element Configuration :

Single

Number of Terminations :

3

Threshold Voltage :

2.5V

Nominal Vgs :

2.5 V

Power Dissipation :

79W

Operating Temperature :

-55°C~175°C TJ

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mounting Type :

Through Hole

Fall Time (Typ) :

110 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

ECCN Code :

EAR99

Length :

10.67mm

Number of Pins :

3

Series :

QFET®

Packaging :

Tube

Resistance :

35mOhm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

79W Tc

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Weight :

1.8g

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

REACH SVHC :

No SVHC

Current Rating :

32A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Continuous Drain Current (ID) :

32A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Turn-Off Delay Time :

60 ns

Height :

16.3mm

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Radiation Hardening :

No