FQP30N06L
- Mfr.Part #
- FQP30N06L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 32A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- Voltage - Rated DC :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1040pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 32A
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 60V
- Threshold Voltage :
- 2.5V
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.8g
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 32A
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 60 ns
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 79W Tc
- Nominal Vgs :
- 2.5 V
- Power Dissipation :
- 79W
- Height :
- 16.3mm
- Packaging :
- Tube
- Resistance :
- 35mOhm
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Series :
- QFET®
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Fall Time (Typ) :
- 110 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 210ns
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Width :
- 4.7mm
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 16A, 10V
- Turn On Delay Time :
- 15 ns
- Datasheets
- FQP30N06L

N-Channel Tube 35m Ω @ 16A, 10V ±20V 1040pF @ 25V 20nC @ 5V TO-220-3
FQP30N06L is a logic level Mosfet and an N-Channel enhancement mode power field effect transistor. That is, it can be turned on completely by using a microcontroller's logic level (3.3V OR 5V). The FQP30N06L is widely used because of its low on-state resistance, superior switching performance, and ability to endure high energy pulses in avalanche and commutation modes. At 25 degrees Celsius, the FQP30N06L Mosfet has voltage, current, and power dissipation ratings of 60 V, 32 A, and 79 watts, respectively. At a maximum Gate threshold voltage of 10 V, it has a low Drain to source resistance (RDS(ON)) of 0.035 ohms.
FQP30N06L Features
Low on resistance: 35mΩ maximum
Gate threshold voltage: 10V
Low RSS capacitance: 50pF typical
Junction temeprature maximum rate: 175°C
100% avalanche tested
FQP30N06L Applications
Arduino projects
DC Motor control
Swithcing power appliances
Audio amplifiers
Power supplies
Telecom
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