FQP34N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Nominal Vgs :

5 V

Fall Time (Typ) :

115 ns

Avalanche Energy Rating (Eas) :

640 mJ

Width :

4.7mm

Turn-Off Delay Time :

125 ns

Turn On Delay Time :

40 ns

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Drain-source On Resistance-Max :

0.075Ohm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2000

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.5A, 10V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

180W Tc

Series :

QFET®

Power Dissipation :

180W

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

1.8g

Drain to Source Breakdown Voltage :

200V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

REACH SVHC :

No SVHC

Height :

9.4mm

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

31A

Number of Pins :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Threshold Voltage :

5V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Length :

10.1mm

Rise Time :

280ns