FQP34N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Rise Time :

280ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

115 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.5A, 10V

Packaging :

Tube

Weight :

1.8g

Series :

QFET®

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

31A

Power Dissipation :

180W

Number of Pins :

3

Factory Lead Time :

5 Weeks

Nominal Vgs :

5 V

Power Dissipation-Max :

180W Tc

Avalanche Energy Rating (Eas) :

640 mJ

Transistor Element Material :

SILICON

Voltage - Rated DC :

200V

Published :

2000

Threshold Voltage :

5V

Turn On Delay Time :

40 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

4.7mm

Current Rating :

31A

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Length :

10.1mm

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.075Ohm

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

125 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-220-3

Height :

9.4mm

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

31A Tc