FQP34N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

40 ns

Continuous Drain Current (ID) :

31A

Radiation Hardening :

No

Number of Elements :

1

Threshold Voltage :

5V

Mount :

Through Hole

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

115 ns

Series :

QFET®

Voltage - Rated DC :

200V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.075Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Published :

2000

FET Type :

N-Channel

Width :

4.7mm

Avalanche Energy Rating (Eas) :

640 mJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

31A

Factory Lead Time :

5 Weeks

Nominal Vgs :

5 V

Power Dissipation-Max :

180W Tc

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Number of Pins :

3

Weight :

1.8g

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Height :

9.4mm

Package / Case :

TO-220-3

Power Dissipation :

180W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Length :

10.1mm

Mounting Type :

Through Hole

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Rise Time :

280ns

Turn-Off Delay Time :

125 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC