FQP3P20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Width :

4.7mm

Continuous Drain Current (ID) :

2.8A

Rise Time :

35ns

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

JESD-609 Code :

e3

ECCN Code :

EAR99

Fall Time (Typ) :

25 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

-200V

Current Rating :

-2.8A

Voltage - Rated DC :

-200V

Resistance :

2.7Ohm

Power Dissipation :

52W

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Length :

10.67mm

Radiation Hardening :

No

Turn On Delay Time :

8.5 ns

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Element Configuration :

Single

Pbfree Code :

yes

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Voltage :

200V

Current :

28A

Published :

2013

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Height :

16.3mm

Mounting Type :

Through Hole

Number of Terminations :

3

FET Type :

P-Channel

Number of Pins :

3

Number of Elements :

1

Power Dissipation-Max :

52W Tc

Vgs (Max) :

±30V

Threshold Voltage :

-5V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.4A, 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE