FQP3N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Terminal Finish :

MATTE TIN

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Pbfree Code :

yes

Series :

QFET®

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Drain to Source Voltage (Vdss) :

900V

DS Breakdown Voltage-Min :

900V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

450 mJ

Reach Compliance Code :

Unknown

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

4.25 Ω @ 1.8A, 10V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

14.4A

Power Dissipation-Max :

130W Tc

Terminal Position :

Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

3.6A