FQP3N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

5 V

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Resistance :

4.8Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

107W

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Mounting Type :

Through Hole

Series :

QFET®

Turn-Off Delay Time :

22.5 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Length :

10.1mm

Dual Supply Voltage :

800V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Voltage - Rated DC :

800V

Continuous Drain Current (ID) :

3A

Height :

9.4mm

Rise Time :

43.5ns

Fall Time (Typ) :

32 ns

Power Dissipation-Max :

107W Tc

Lead Free :

Lead Free

Radiation Hardening :

No

Weight :

1.8g

FET Type :

N-Channel

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Width :

4.7mm

Published :

2003

Current Rating :

3A

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain Current-Max (Abs) (ID) :

3A

REACH SVHC :

No SVHC

Termination :

Through Hole

Drain to Source Breakdown Voltage :

800V

Factory Lead Time :

6 Weeks

Number of Pins :

3

Packaging :

Tube