FQP3N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Rise Time :

43.5ns

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Published :

2003

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Element Configuration :

Single

Termination :

Through Hole

Fall Time (Typ) :

32 ns

Current Rating :

3A

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

800V

Dual Supply Voltage :

800V

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Pbfree Code :

yes

Threshold Voltage :

5V

Power Dissipation-Max :

107W Tc

Transistor Application :

SWITCHING

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Number of Pins :

3

ECCN Code :

EAR99

Weight :

1.8g

Length :

10.1mm

Power Dissipation :

107W

Turn On Delay Time :

15 ns

Factory Lead Time :

6 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn-Off Delay Time :

22.5 ns

Package / Case :

TO-220-3

Contact Plating :

Tin

Number of Terminations :

3

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Resistance :

4.8Ohm

Series :

QFET®

Drain Current-Max (Abs) (ID) :

3A

Nominal Vgs :

5 V

Height :

9.4mm

Width :

4.7mm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No