FQP3N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.8g

Height :

9.4mm

Series :

QFET®

Resistance :

4.8Ohm

Radiation Hardening :

No

FET Type :

N-Channel

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation-Max :

107W Tc

Nominal Vgs :

5 V

Turn-Off Delay Time :

22.5 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

TO-220-3

Termination :

Through Hole

Current Rating :

3A

JESD-609 Code :

e3

Contact Plating :

Tin

Pbfree Code :

yes

Continuous Drain Current (ID) :

3A

Fall Time (Typ) :

32 ns

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Published :

2003

Vgs (Max) :

±30V

Dual Supply Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.7mm

Length :

10.1mm

Drain to Source Breakdown Voltage :

800V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Through Hole

Factory Lead Time :

6 Weeks

Voltage - Rated DC :

800V

Turn On Delay Time :

15 ns

Number of Elements :

1

REACH SVHC :

No SVHC

Power Dissipation :

107W

Drain Current-Max (Abs) (ID) :

3A

Threshold Voltage :

5V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Number of Pins :

3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rise Time :

43.5ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA