FQP3N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

75W

Rise Time :

30ns

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

3A

Pbfree Code :

yes

Mount :

Through Hole

Factory Lead Time :

6 Weeks

Packaging :

Tube

Element Configuration :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

35 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

3A

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

ECCN Code :

EAR99

Resistance :

3.4Ohm

Power Dissipation-Max :

75W Tc

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Fall Time (Typ) :

35 ns

Vgs (Max) :

±30V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

Weight :

1.8g

Series :

QFET®

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V