FQP3N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Vgs (Max) :

±30V

Published :

2013

Mount :

Through Hole

Series :

QFET®

Power Dissipation :

75W

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

3A

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

35 ns

Number of Elements :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Fall Time (Typ) :

35 ns

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Element Configuration :

Single

Power Dissipation-Max :

75W Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

6 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

30ns

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Resistance :

3.4Ohm

Peak Reflow Temperature (Cel) :

260