FQP3N60
- Mfr.Part #
- FQP3N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3A TO220-3
- Stock
- 23,752
- In Stock :
- 23,752
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 6 Weeks
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Power Dissipation :
- 75W
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Continuous Drain Current (ID) :
- 3A
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Rise Time :
- 30ns
- Number of Elements :
- 1
- Fall Time (Typ) :
- 35 ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 600V
- Published :
- 2013
- Turn-Off Delay Time :
- 35 ns
- Drain Current-Max (Abs) (ID) :
- 3A
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 75W Tc
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Resistance :
- 3.4Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 1.8g
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 1.5A, 10V
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Element Configuration :
- Single
- Datasheets
- FQP3N60

N-Channel Tube 3.4 Ω @ 1.5A, 10V ±30V 565pF @ 25V 14nC @ 10V TO-220-3
FQP3N60C Overview
The maximum input capacitance of this device is 565pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FQP3N60C Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
FQP3N60C Applications
There are a lot of ON Semiconductor
FQP3N60C applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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