FQP3N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Published :

2013

Packaging :

Tube

Resistance :

3.4Ohm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Weight :

1.8g

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

75W

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Continuous Drain Current (ID) :

3A

Number of Elements :

1

Pbfree Code :

yes

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Drain Current-Max (Abs) (ID) :

3A

Factory Lead Time :

6 Weeks

Turn-Off Delay Time :

35 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

75W Tc

Series :

QFET®

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Fall Time (Typ) :

35 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

30ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

ECCN Code :

EAR99