FQP3N60

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Mfr.Part #
FQP3N60
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO220-3
Stock
23,752
In Stock :
23,752

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
6 Weeks
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
Power Dissipation :
75W
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Continuous Drain Current (ID) :
3A
Mounting Type :
Through Hole
Series :
QFET®
Rise Time :
30ns
Number of Elements :
1
Fall Time (Typ) :
35 ns
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
565pF @ 25V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
600V
Published :
2013
Turn-Off Delay Time :
35 ns
Drain Current-Max (Abs) (ID) :
3A
Qualification Status :
Not Qualified
Package / Case :
TO-220-3
Turn On Delay Time :
12 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
75W Tc
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±30V
Number of Terminations :
3
Resistance :
3.4Ohm
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Weight :
1.8g
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 1.5A, 10V
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Packaging :
Tube
Element Configuration :
Single
Datasheets
FQP3N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP3N60 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FQP3N60 pinout, FQP3N60 datasheet PDF, FQP3N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP3N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP3N60


N-Channel Tube 3.4 Ω @ 1.5A, 10V ±30V 565pF @ 25V 14nC @ 10V TO-220-3

FQP3N60C Overview


The maximum input capacitance of this device is 565pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

FQP3N60C Features


a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns


FQP3N60C Applications


There are a lot of ON Semiconductor
FQP3N60C applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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