FQP2P40-F080

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

30 ns

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-400V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

75ns

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 1A, 10V

Fall Time (Typ) :

60 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Turn-Off Delay Time :

55 ns

Number of Channels :

1

Power Dissipation-Max :

63W Tc

Packaging :

Tube

Mount :

Through Hole

Vgs (Max) :

±30V

Series :

QFET®

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Factory Lead Time :

7 Weeks

Continuous Drain Current (ID) :

2A

Drain to Source Voltage (Vdss) :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Pulsed Drain Current-Max (IDM) :

8A

JESD-609 Code :

e3

Weight :

1.8g

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole