FQP2N30
- Mfr.Part #
- FQP2N30
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 2.1A TO220-3
- Stock
- 3,203
- In Stock :
- 3,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 40W Tc
- Published :
- 2000
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- QFET®
- Supplier Device Package :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 130pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 3.7Ohm @ 1.05A, 10V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 300V
- Vgs (Max) :
- ±30V
- Datasheets
- FQP2N30

N-Channel Tube 3.7Ohm @ 1.05A, 10V ±30V 130pF @ 25V 5nC @ 10V 300V TO-220-3
FQP2N30 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 130pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQP2N30 Features
a 300V drain to source voltage (Vdss)
FQP2N30 Applications
There are a lot of ON Semiconductor
FQP2N30 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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