FQP2N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Drain Current-Max (Abs) (ID) :

1.8A

Published :

2000

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Pbfree Code :

yes

Surface Mount :

No

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

400V

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

5.8 Ω @ 900mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

85 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

7.2A

Power Dissipation-Max :

40W Tc

Packaging :

Tube

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Package / Case :

TO-220-3