FQP27P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

6.35mm

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Continuous Drain Current (ID) :

-27A

Nominal Vgs :

-4 V

Current Rating :

-27A

Turn On Delay Time :

18 ns

Dual Supply Voltage :

-60V

Avalanche Energy Rating (Eas) :

560 mJ

Resistance :

70mOhm

Contact Plating :

Tin

Number of Elements :

1

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

120W

REACH SVHC :

No SVHC

Width :

9.9mm

Turn-Off Delay Time :

30 ns

FET Type :

P-Channel

Element Configuration :

Single

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Packaging :

Tube

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rds On (Max) @ Id, Vgs :

70m Ω @ 13.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

185ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Weight :

1.8g

Drain to Source Breakdown Voltage :

-60V

Length :

6.35mm

Mounting Type :

Through Hole

Threshold Voltage :

-4V

Power Dissipation-Max :

120W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Series :

QFET®

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

-60V

JESD-609 Code :

e3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Fall Time (Typ) :

90 ns

RoHS Status :

ROHS3 Compliant