FQP24N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Current Rating :

24A

Rds On (Max) @ Id, Vgs :

60m Ω @ 12A, 10V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Vgs (Max) :

±25V

Factory Lead Time :

5 Weeks

Fall Time (Typ) :

35 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Avalanche Energy Rating (Eas) :

230 mJ

Continuous Drain Current (ID) :

24A

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Pulsed Drain Current-Max (IDM) :

96A

Packaging :

Tube

Power Dissipation :

75W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

75W Tc

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.06Ohm

Weight :

1.8g

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

80V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Drain to Source Breakdown Voltage :

80V

Number of Elements :

1

Rise Time :

105ns

Radiation Hardening :

No

Series :

QFET®

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Turn-Off Delay Time :

30 ns