FQP20N06TSTU

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Mfr.Part #
FQP20N06TSTU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 20A TO220-3
Stock
39,303
In Stock :
39,303

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
60V
Drain to Source Breakdown Voltage :
60V
Fall Time (Typ) :
25 ns
FET Type :
N-Channel
Power Dissipation :
53W
Series :
QFET®
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Published :
2013
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 25V
Gate to Source Voltage (Vgs) :
25V
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±25V
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Current Rating :
20A
Power Dissipation-Max :
53W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
60m Ω @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Continuous Drain Current (ID) :
20A
Lead Free :
Lead Free
Turn-Off Delay Time :
20 ns
RoHS Status :
RoHS Compliant
Rise Time :
45ns
Mount :
Through Hole
Datasheets
FQP20N06TSTU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP20N06TSTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, FQP20N06TSTU pinout, FQP20N06TSTU datasheet PDF, FQP20N06TSTU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP20N06TSTU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP20N06TSTU


N-Channel Tube 60m Ω @ 10A, 10V ±25V 590pF @ 25V 15nC @ 10V TO-220-3

FQP20N06TSTU Overview


A device's maximal input capacitance is 590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).

FQP20N06TSTU Features


a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns


FQP20N06TSTU Applications


There are a lot of ON Semiconductor
FQP20N06TSTU applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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