FQP20N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.1mm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Terminations :

3

Pbfree Code :

yes

Power Dissipation :

53W

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

20A

Power Dissipation-Max :

53W Tc

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

Number of Elements :

1

FET Type :

N-Channel

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Mount :

Through Hole

Threshold Voltage :

4V

Voltage - Rated DC :

60V

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

45ns

Transistor Application :

SWITCHING

Current Rating :

20A

Turn-Off Delay Time :

20 ns

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

5 Weeks

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Series :

QFET®

Contact Plating :

Tin

REACH SVHC :

No SVHC

Packaging :

Tube

Mounting Type :

Through Hole

Resistance :

70mOhm

JESD-609 Code :

e3

Weight :

1.8g

Height :

9.4mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)