FQP20N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.4mm

Length :

10.1mm

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Power Dissipation :

53W

Number of Terminations :

3

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Current Rating :

20A

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

45ns

Element Configuration :

Single

FET Type :

N-Channel

Power Dissipation-Max :

53W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

70mOhm

Packaging :

Tube

Number of Pins :

3

Lead Free :

Lead Free

Width :

4.7mm

Weight :

1.8g

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Radiation Hardening :

No

Turn On Delay Time :

5 ns

Turn-Off Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Fall Time (Typ) :

20 ns

Vgs (Max) :

±25V

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Published :

2013

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

80A

JESD-609 Code :

e3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V