FQP20N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

60V

Number of Elements :

1

Current Rating :

20A

Continuous Drain Current (ID) :

20A

Length :

10.1mm

Pulsed Drain Current-Max (IDM) :

80A

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

53W Tc

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Factory Lead Time :

5 Weeks

Turn-Off Delay Time :

20 ns

Radiation Hardening :

No

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

53W

Number of Pins :

3

Width :

4.7mm

Resistance :

70mOhm

Lead Free :

Lead Free

Threshold Voltage :

4V

JESD-609 Code :

e3

Series :

QFET®

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Fall Time (Typ) :

20 ns

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Number of Terminations :

3

Height :

9.4mm

REACH SVHC :

No SVHC

Mount :

Through Hole

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

5 ns

Published :

2013

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

45ns

FET Type :

N-Channel