FQP22N30

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Mfr.Part #
FQP22N30
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 300V 21A TO220-3
Stock
4,537
In Stock :
4,537

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
Threshold Voltage :
5V
Lead Free :
Lead Free
Element Configuration :
Single
Fall Time (Typ) :
100 ns
Series :
QFET®
JESD-609 Code :
e3
Number of Pins :
3
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
84A
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Nominal Vgs :
5 V
Power Dissipation-Max :
170W Tc
Weight :
1.8g
Factory Lead Time :
4 Weeks
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Drain to Source Breakdown Voltage :
300V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
9.4mm
Current Rating :
21A
Pbfree Code :
yes
Packaging :
Tube
Mount :
Through Hole
Number of Elements :
1
Resistance :
160mOhm
Turn-Off Delay Time :
85 ns
Continuous Drain Current (ID) :
21A
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5V @ 250μA
Radiation Hardening :
No
Width :
4.7mm
Turn On Delay Time :
35 ns
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 25V
Voltage - Rated DC :
300V
Power Dissipation :
170W
Published :
2000
Rise Time :
230ns
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Rds On (Max) @ Id, Vgs :
160m Ω @ 10.5A, 10V
Length :
10.1mm
Vgs (Max) :
±30V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP22N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, FQP22N30 pinout, FQP22N30 datasheet PDF, FQP22N30 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP22N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP22N30


N-Channel Tube 160m Ω @ 10.5A, 10V ±30V 2200pF @ 25V 60nC @ 10V TO-220-3

FQP22N30 Description

This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductor's proprietaryplanar stripe and DMOs technology. This advancedMOSFET technology has been especially tailored to reduceon-state resistance,and to provide superior switchingperformance and high avalanche energy 'strength. Thesedevices are suitable for switched mode power supplies,active power factor correction (PFC), and electronic lampballasts.



FQP22N30 Features

21A,300 V,RDs(on)= 160 mQ (Max.)@Vcs = 10 v,

lD= 10.5A

Low Gate Charge (Typ. 47 nC)

Low Crss (Typ. 40 pF)

100%Avalanche Tested


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