FQP22N30
- Mfr.Part #
- FQP22N30
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 21A TO220-3
- Stock
- 4,537
- In Stock :
- 4,537
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Current Rating :
- 21A
- Continuous Drain Current (ID) :
- 21A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 84A
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 100 ns
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 10.5A, 10V
- Nominal Vgs :
- 5 V
- Width :
- 4.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 1.8g
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Series :
- QFET®
- Height :
- 9.4mm
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Length :
- 10.1mm
- Rise Time :
- 230ns
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 35 ns
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Power Dissipation :
- 170W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 85 ns
- Resistance :
- 160mOhm
- Drain to Source Breakdown Voltage :
- 300V
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 5V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Published :
- 2000
- Power Dissipation-Max :
- 170W Tc
- Voltage - Rated DC :
- 300V
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Datasheets
- FQP22N30
FQP22N30 Documents

N-Channel Tube 160m Ω @ 10.5A, 10V ±30V 2200pF @ 25V 60nC @ 10V TO-220-3
FQP22N30 Description
This N-Channel enhancement mode power MOSFET isproduced using Fairchild Semiconductor's proprietaryplanar stripe and DMOs technology. This advancedMOSFET technology has been especially tailored to reduceon-state resistance,and to provide superior switchingperformance and high avalanche energy 'strength. Thesedevices are suitable for switched mode power supplies,active power factor correction (PFC), and electronic lampballasts.
FQP22N30 Features
21A,300 V,RDs(on)= 160 mQ (Max.)@Vcs = 10 v,
lD= 10.5A
Low Gate Charge (Typ. 47 nC)
Low Crss (Typ. 40 pF)
100%Avalanche Tested
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