FQP22N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Continuous Drain Current (ID) :

21A

Radiation Hardening :

No

Fall Time (Typ) :

100 ns

Published :

2000

Current Rating :

21A

Mounting Type :

Through Hole

Packaging :

Tube

Pbfree Code :

yes

Number of Terminations :

3

Width :

4.7mm

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Weight :

1.8g

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Turn-Off Delay Time :

85 ns

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Threshold Voltage :

5V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Breakdown Voltage :

300V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Resistance :

160mOhm

Height :

9.4mm

Turn On Delay Time :

35 ns

Power Dissipation :

170W

Voltage - Rated DC :

300V

Nominal Vgs :

5 V

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Series :

QFET®

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

84A

Length :

10.1mm

Rise Time :

230ns

Power Dissipation-Max :

170W Tc

Gate to Source Voltage (Vgs) :

30V