FQP20N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Terminations :

3

Pbfree Code :

yes

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Weight :

1.8g

ECCN Code :

EAR99

Element Configuration :

Single

Vgs (Max) :

±25V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Power Dissipation :

53W

Threshold Voltage :

4V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Height :

9.4mm

Turn-Off Delay Time :

20 ns

Fall Time (Typ) :

20 ns

Turn On Delay Time :

5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

Gate to Source Voltage (Vgs) :

25V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Number of Pins :

3

Length :

10.1mm

Current Rating :

20A

Width :

4.7mm

FET Type :

N-Channel

Power Dissipation-Max :

53W Tc

Rise Time :

45ns

Packaging :

Tube

Resistance :

70mOhm

Number of Elements :

1

Continuous Drain Current (ID) :

20A

Published :

2013