FQP20N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

5 Weeks

Vgs (Max) :

±25V

Resistance :

70mOhm

Turn-Off Delay Time :

20 ns

Width :

4.7mm

Voltage - Rated DC :

60V

Pulsed Drain Current-Max (IDM) :

80A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

20A

Contact Plating :

Tin

Power Dissipation :

53W

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Published :

2013

Weight :

1.8g

Turn On Delay Time :

5 ns

Continuous Drain Current (ID) :

20A

Radiation Hardening :

No

Series :

QFET®

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Height :

9.4mm

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

60m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V

FET Type :

N-Channel

Power Dissipation-Max :

53W Tc

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Mount :

Through Hole

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Number of Elements :

1

Lead Free :

Lead Free

Rise Time :

45ns

Gate to Source Voltage (Vgs) :

25V

Length :

10.1mm

Pbfree Code :

yes