FQP20N06L
- Mfr.Part #
- FQP20N06L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Current Rating :
- 21A
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Weight :
- 1.8g
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 53W Tc
- Height :
- 9.4mm
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Threshold Voltage :
- 2.5V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 5 Weeks
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 10.5A, 10V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 21A
- Width :
- 4.7mm
- Pulsed Drain Current-Max (IDM) :
- 84A
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Package / Case :
- TO-220-3
- Turn On Delay Time :
- 10 ns
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Rise Time :
- 165ns
- Power Dissipation :
- 53W
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Length :
- 10.1mm
- JESD-609 Code :
- e3
- Resistance :
- 70mOhm
- Turn-Off Delay Time :
- 35 ns
- Fall Time (Typ) :
- 70 ns
- Series :
- QFET®
- ECCN Code :
- EAR99
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQP20N06L
N-Channel Tube 55m Ω @ 10.5A, 10V ±20V 630pF @ 25V 13nC @ 5V TO-220-3
FQP20N06L Description
FQP20N06L is an N-Channel QFET? Power MOSFET. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. The advanced MOSFET FQP20N06L has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQP20N06L is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP20N06L Features
-
21A, 60V, RDS(on) = 55mΩ(Max.) @VGS = 10 V, ID = 10.5A
-
Low gate charge ( Typ. 9.5nC)
-
Low Crss ( Typ. 35pF)
-
100% avalanche tested
-
175°C maximum junction temperature rating
FQP20N06L Applications
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
-
Other Audio & Video
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