FQP20N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Rise Time :

165ns

Power Dissipation-Max :

53W Tc

Continuous Drain Current (ID) :

21A

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Current Rating :

21A

Turn-Off Delay Time :

35 ns

Published :

2001

Mounting Type :

Through Hole

Power Dissipation :

53W

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Pulsed Drain Current-Max (IDM) :

84A

Factory Lead Time :

5 Weeks

Resistance :

70mOhm

Current - Continuous Drain (Id) @ 25°C :

21A Tc

JESD-609 Code :

e3

Fall Time (Typ) :

70 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Turn On Delay Time :

10 ns

Number of Elements :

1

Length :

10.1mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Weight :

1.8g

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Element Configuration :

Single

Packaging :

Tube

Number of Terminations :

3

Threshold Voltage :

2.5V

Vgs (Max) :

±20V

Voltage - Rated DC :

60V

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Height :

9.4mm

Package / Case :

TO-220-3

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

55m Ω @ 10.5A, 10V

Width :

4.7mm