FQP20N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

55m Ω @ 10.5A, 10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Length :

10.1mm

Fall Time (Typ) :

70 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Number of Terminations :

3

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Rise Time :

165ns

Contact Plating :

Tin

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Turn On Delay Time :

10 ns

Number of Pins :

3

Element Configuration :

Single

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Packaging :

Tube

Published :

2001

Threshold Voltage :

2.5V

Power Dissipation-Max :

53W Tc

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Resistance :

70mOhm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

21A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Current Rating :

21A

Number of Elements :

1

Power Dissipation :

53W

Width :

4.7mm

Factory Lead Time :

5 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

84A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Mount :

Through Hole

Series :

QFET®

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Height :

9.4mm

JESD-609 Code :

e3

Pbfree Code :

yes