FQP24N08
- Mfr.Part #
- FQP24N08
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 24A TO220-3
- Stock
- 1,464
- In Stock :
- 1,464
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 24A
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Turn-Off Delay Time :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 80V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Rise Time :
- 105ns
- Avalanche Energy Rating (Eas) :
- 230 mJ
- Power Dissipation :
- 75W
- Series :
- QFET®
- Number of Terminations :
- 3
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Factory Lead Time :
- 5 Weeks
- Fall Time (Typ) :
- 35 ns
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 12A, 10V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 96A
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.06Ohm
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 75W Tc
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±25V
- Continuous Drain Current (ID) :
- 24A
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 25V
- Weight :
- 1.8g
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 80V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Datasheets
- FQP24N08

N-Channel Tube 60m Ω @ 12A, 10V ±25V 750pF @ 25V 25nC @ 10V TO-220-3
FQP24N08 Description
The FQP24N08 is an N-Channel enhancement mode power MOSFET that uses ON Semiconductor's planar stripe and DMOS technology. The FQP24N08 MOSFET technology has been specifically designed to lower on-state resistance while also delivering excellent switching performance and avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all good candidates for FQP24N08 MOSFETs.
FQP24N08 Features
-
Low Crss ( Typ. 50pF)
-
100% avalanche tested
-
24A, 80V, RDS(on) = 60mΩ(Max.) @VGS = 10 V, ID = 12A
-
Low gate charge ( Typ. 19nC)
-
175°C maximum junction temperature rating
FQP24N08 Applications
-
switched-mode power supplies
-
audio amplifier
-
DC motor control
-
variable switching power applications.
-
Other Industrial
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