FQP2P40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2000

Drain to Source Voltage (Vdss) :

400V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

120 mJ

Drain Current-Max (Abs) (ID) :

2A

Rds On (Max) @ Id, Vgs :

6.5 Ω @ 1A, 10V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Power Dissipation-Max :

63W Tc

Series :

QFET®

Reach Compliance Code :

Compliant

Surface Mount :

No

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

2A Tc

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

400V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Packaging :

Tube