FQP2P25

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Mfr.Part #
FQP2P25
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 250V 2.3A TO220-3
Stock
37,915
In Stock :
37,915

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
DS Breakdown Voltage-Min :
250V
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
Terminal Position :
Single
Package / Case :
TO-220-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
4 Ω @ 1.15A, 10V
Surface Mount :
No
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
2.3A
JESD-609 Code :
e3
JESD-30 Code :
R-PSFM-T3
Series :
QFET®
Current - Continuous Drain (Id) @ 25°C :
2.3A Tc
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain-source On Resistance-Max :
4Ohm
Pbfree Code :
yes
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
52W Tc
Pulsed Drain Current-Max (IDM) :
9.2A
Avalanche Energy Rating (Eas) :
120 mJ
Qualification Status :
COMMERCIAL
Drain to Source Voltage (Vdss) :
250V
Mounting Type :
Through Hole
FET Type :
P-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP2P25 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, FQP2P25 pinout, FQP2P25 datasheet PDF, FQP2P25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP2P25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP2P25


P-Channel Tube 4 Ω @ 1.15A, 10V ±30V 250pF @ 25V 8.5nC @ 10V 250V TO-220-3

FQP2P25 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.3A.Pulsed drain current is maximum rated peak drain current 9.2A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQP2P25 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 9.2A.
a 250V drain to source voltage (Vdss)


FQP2P25 Applications


There are a lot of Rochester Electronics, LLC
FQP2P25 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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