FQP2P25

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Mfr.Part #
FQP2P25
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 250V 2.3A TO220-3
Stock
37,915
In Stock :
37,915

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-220AB
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain-source On Resistance-Max :
4Ohm
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Drain to Source Voltage (Vdss) :
250V
Number of Terminations :
3
Pbfree Code :
yes
Series :
QFET®
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
FET Type :
P-Channel
DS Breakdown Voltage-Min :
250V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
120 mJ
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Qualification Status :
COMMERCIAL
Current - Continuous Drain (Id) @ 25°C :
2.3A Tc
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
9.2A
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Package / Case :
TO-220-3
Terminal Finish :
MATTE TIN
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Rds On (Max) @ Id, Vgs :
4 Ω @ 1.15A, 10V
Drain Current-Max (Abs) (ID) :
2.3A
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
JESD-609 Code :
e3
Power Dissipation-Max :
52W Tc
Datasheets
FQP2P25
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP2P25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, FQP2P25 pinout, FQP2P25 datasheet PDF, FQP2P25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP2P25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP2P25


P-Channel Tube 4 Ω @ 1.15A, 10V ±30V 250pF @ 25V 8.5nC @ 10V 250V TO-220-3

FQP2P25 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.3A.Pulsed drain current is maximum rated peak drain current 9.2A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQP2P25 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 9.2A.
a 250V drain to source voltage (Vdss)


FQP2P25 Applications


There are a lot of Rochester Electronics, LLC
FQP2P25 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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