FQP2NA90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

Not Applicable

Avalanche Energy Rating (Eas) :

310 mJ

DS Breakdown Voltage-Min :

900V

Packaging :

Tube

Terminal Finish :

MATTE TIN

Surface Mount :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

FET Type :

N-Channel

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Power Dissipation-Max :

107W Tc

Number of Elements :

1

Drain to Source Voltage (Vdss) :

900V

Pulsed Drain Current-Max (IDM) :

11.2A

Series :

QFET®

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

5.8 Ω @ 1.4A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

2.8A