FQP2N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

900V

Operating Mode :

ENHANCEMENT MODE

Length :

10.1mm

Factory Lead Time :

5 Weeks

Series :

QFET®

Threshold Voltage :

5V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

35ns

Continuous Drain Current (ID) :

2.2A

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 1.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Published :

2000

Turn On Delay Time :

15 ns

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

85W Tc

Current Rating :

2.2A

Element Configuration :

Single

Voltage - Rated DC :

900V

Vgs (Max) :

±30V

FET Type :

N-Channel

Turn-Off Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

8.8A

Number of Pins :

3

Width :

4.7mm

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Mounting Type :

Through Hole

Resistance :

7.2mOhm

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

85W

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Fall Time (Typ) :

30 ns

Number of Terminations :

3

Height :

9.4mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Lead Free :

Lead Free