FQP2N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 1.1A, 10V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Weight :

1.8g

Number of Elements :

1

Power Dissipation :

85W

Factory Lead Time :

5 Weeks

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

20 ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

35ns

Continuous Drain Current (ID) :

2.2A

Transistor Application :

SWITCHING

Number of Pins :

3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mount :

Through Hole

Series :

QFET®

Voltage - Rated DC :

900V

Pbfree Code :

yes

Mounting Type :

Through Hole

Vgs (Max) :

±30V

FET Type :

N-Channel

Element Configuration :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

85W Tc

Pulsed Drain Current-Max (IDM) :

8.8A

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Package / Case :

TO-220-3

Resistance :

7.2mOhm

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Threshold Voltage :

5V

Contact Plating :

Tin

Turn On Delay Time :

15 ns

Fall Time (Typ) :

30 ns

Width :

4.7mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

900V

Lead Free :

Lead Free

Height :

9.4mm

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

30V

Current Rating :

2.2A

Length :

10.1mm

JEDEC-95 Code :

TO-220AB