FQP2N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current Rating :

2.4A

Fall Time (Typ) :

28 ns

Factory Lead Time :

5 Weeks

Vgs (Max) :

±30V

Number of Pins :

3

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Width :

4.7mm

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 1.2A, 10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

9.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Height :

9.4mm

Package / Case :

TO-220-3

JESD-609 Code :

e3

Continuous Drain Current (ID) :

2.4A

Pbfree Code :

yes

Mount :

Through Hole

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

FET Type :

N-Channel

Packaging :

Tube

Turn-Off Delay Time :

25 ns

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Drain to Source Breakdown Voltage :

800V

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

800V

Power Dissipation :

85W

Rise Time :

30ns

Transistor Element Material :

SILICON

Series :

QFET®

Transistor Application :

SWITCHING

Power Dissipation-Max :

85W Tc

Length :

10.1mm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Published :

2000