FQP2N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.4A

Packaging :

Tube

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs (Max) :

±30V

Weight :

1.8g

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Length :

10.1mm

Number of Pins :

3

Package / Case :

TO-220-3

Rise Time :

30ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

85W Tc

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Turn-Off Delay Time :

25 ns

Power Dissipation :

85W

Voltage - Rated DC :

800V

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 1.2A, 10V

Turn On Delay Time :

12 ns

Published :

2000

Number of Terminations :

3

Height :

9.4mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Fall Time (Typ) :

28 ns

Pulsed Drain Current-Max (IDM) :

9.6A

Width :

4.7mm

Mounting Type :

Through Hole

Current Rating :

2.4A

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

800V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V