FQP2N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Continuous Drain Current (ID) :

2.4A

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 1.2A, 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

800V

Weight :

1.8g

Published :

2000

Mount :

Through Hole

Radiation Hardening :

No

Current Rating :

2.4A

Power Dissipation :

85W

Number of Pins :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pulsed Drain Current-Max (IDM) :

9.6A

Voltage - Rated DC :

800V

JESD-609 Code :

e3

Length :

10.1mm

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

Rise Time :

30ns

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Width :

4.7mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Turn On Delay Time :

12 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Number of Terminations :

3

Pbfree Code :

yes

Fall Time (Typ) :

28 ns

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

85W Tc

Height :

9.4mm

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V