FQP2N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Series :

QFET®

Number of Terminations :

3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

JESD-609 Code :

e3

Turn-Off Delay Time :

24 ns

Continuous Drain Current (ID) :

2A

Vgs (Max) :

±30V

Voltage - Rated DC :

600V

Number of Elements :

1

Width :

4.7mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

600V

Power Dissipation :

54W

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Power Dissipation-Max :

54W Tc

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Weight :

1.8g

Mount :

Through Hole

Package / Case :

TO-220-3

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

2A

Drain Current-Max (Abs) (ID) :

2A

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Resistance :

4.7ohm

Published :

2013

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

28 ns

Operating Mode :

ENHANCEMENT MODE

Height :

9.4mm

Pbfree Code :

yes

Turn On Delay Time :

9 ns

Length :

10.1mm

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

8A

Radiation Hardening :

No

Termination :

Through Hole

Rise Time :

25ns

REACH SVHC :

No SVHC

Packaging :

Tube