FQP2N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

4.7ohm

Length :

10.1mm

Package / Case :

TO-220-3

Element Configuration :

Single

Turn-Off Delay Time :

24 ns

Number of Pins :

3

FET Type :

N-Channel

Width :

4.7mm

Published :

2013

Nominal Vgs :

4 V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Threshold Voltage :

4V

Current Rating :

2A

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

28 ns

Rise Time :

25ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Height :

9.4mm

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Turn On Delay Time :

9 ns

Number of Elements :

1

Packaging :

Tube

Number of Terminations :

3

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Radiation Hardening :

No

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2A

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

600V

Termination :

Through Hole

Series :

QFET®

ECCN Code :

EAR99

Power Dissipation-Max :

54W Tc

Voltage - Rated DC :

600V

Factory Lead Time :

4 Weeks

Weight :

1.8g

Drain Current-Max (Abs) (ID) :

2A

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

8A

Power Dissipation :

54W

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3