FJP1943RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Factory Lead Time :

2 Weeks

Max Collector Current :

15A

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

230V

Emitter Base Voltage (VEBO) :

-5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

80W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Package / Case :

TO-220-3

Power Dissipation :

80W

Frequency :

30MHz

Published :

2013

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Current - Collector Cutoff (Max) :

5μA ICBO

Packaging :

Tube

Gain Bandwidth Product :

30MHz

Transistor Element Material :

SILICON

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

230V

Transistor Application :

AMPLIFIER

Transistor Type :

PNP

Weight :

1.8g

Polarity/Channel Type :

PNP

Transition Frequency :

30MHz

Number of Terminations :

3

hFE Min :

55

Operating Temperature :

-50°C~150°C TJ

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Number of Pins :

3

Collector Base Voltage (VCBO) :

-230V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3