FJP1943RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Number of Terminations :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

-5V

Vce Saturation (Max) @ Ib, Ic :

3V @ 800mA, 8A

Transistor Type :

PNP

Frequency :

30MHz

JEDEC-95 Code :

TO-220AB

Gain Bandwidth Product :

30MHz

Collector Emitter Voltage (VCEO) :

230V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

hFE Min :

55

Element Configuration :

Single

Number of Elements :

1

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

5μA ICBO

JESD-609 Code :

e3

Mount :

Through Hole

Package / Case :

TO-220-3

Lead Free :

Lead Free

Published :

2013

Operating Temperature :

-50°C~150°C TJ

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

-230V

Power Dissipation :

80W

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

230V

Packaging :

Tube

Radiation Hardening :

No

Weight :

1.8g

DC Current Gain (hFE) (Min) @ Ic, Vce :

55 @ 1A 5V

Transition Frequency :

30MHz

Number of Pins :

3

Transistor Application :

AMPLIFIER

Max Collector Current :

15A

Max Power Dissipation :

80W